Characterization of TiO2 layer ALD deposited onto porous 4H-SiC fabricated by Electrochemical Etching

Puntos clave

• TiO2 layers deposited by atomic layer deposition exhibit unique properties on porous 4H-SiC.
• Characterization reveals enhanced surface area and reactivity through electrochemical etching.
• Assessment of the TiO2 films indicates advantages for applications in electronic devices.
• Findings may enable improved semiconductor performance leveraging porous substrates.