Research on the degradation mechanism of the electrical properties of hydrogen-terminated diamond MOS devices under X-ray irradiation

Puntos clave

• X-ray irradiation reduces electrical properties of hydrogen-terminated diamond MOS devices, indicating radiation impact.
• A significant decrease in electrical performance was observed after exposure to X-ray irradiation.
• Analysis focused on the degradation mechanism in MOS devices using hydrogen-terminated diamond as a substrate.
• Implications highlight the need for protective measures in environments with electrical devices exposed to X-ray radiation.