Ultra-robust Y-doped hafnium oxide ferroelectric memristors for intelligent edge computing

Puntos clave

• Improved electrical characteristics were observed in hafnium oxide memristors, enhancing device efficiency for edge computing applications.
• The introduction of Y-dopants resulted in a notable increase in the robustness of the ferroelectric properties of the memristors.
• Assessment focused on the performance metrics of doped hafnium oxide devices across various operational conditions.
• Highlights a potential pathway for developing next-generation intelligent computing systems using advanced memristor technology.