High-density growth of single-crystal CoSi nanowires via plasma-driven synergistic surface engineering

Puntos clave

• High-density growth of single-crystal CoSi nanowires was achieved through advanced surface engineering techniques.
• The innovative plasma-driven approach allows for a streamlined growth process, enhancing quality and efficiency.
• Observational analysis of the growth process indicates significant improvements in crystalline quality at nanoscale dimensions.
• These findings may enable further advancements in nanomaterials, though additional research is needed to verify scalability.