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Gate-coupling-enhanced triboelectric-triggered proximity sensory memory in ferroelectric heterostructure | Synapse
March 3, 2026
Gate-coupling-enhanced triboelectric-triggered proximity sensory memory in ferroelectric heterostructure
ZL
Zhihao Li
LC
Liuqi Cheng
Beijing Institute of Nanoenergy and Nanosystems
KZ
Keteng Zhang
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Puntos clave
Enhanced sensory memory was observed in the ferroelectric heterostructure, showcasing a novel application.
The proximity sensory memory showed significant improvement when triggered by triboelectric effects, suggesting a strong interaction.
Observational analysis utilized gate-coupling strategies to improve memory retention over time.
Highlighting the potential of triboelectric systems, these findings may pave the way for future advanced memory technologies.
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Li et al. (Sat,) studied this question.
synapsesocial.com/papers/69a76104c6e9836116a2e813
https://doi.org/https://doi.org/10.1016/j.nanoen.2026.111801