TiN-Si Schottky Diodes for SWIR Detection

Puntos clave

• TiN-Si Schottky diodes exhibited high-efficiency detection in the short-wave infrared spectrum.
• The diodes showed a significant response to SWIR light, achieving a detection sensitivity of 30 mA/W.
• Assessment using experimental characterization of photodetector performance across various wavelengths supports the findings.
• These findings highlight potential applications in optical sensing technologies needing enhanced infrared detection capabilities.