MOSFET-Based and P-N Diode Based Temperature Sensor in a 4H-SiC CMOS Technology

Puntos clave

• Temperature sensors demonstrate effective performance using MOSFET and P-N diode designs.
• Key findings reveal significant accuracy improvements for temperature measurement in 4H-SiC.
• Assessment using thermal response testing on integrated circuits highlights superior sensitivity.
• These results suggest that MOSFET and P-N diode sensors may enable better thermal management in electronic devices.