N-doped Ge-rich GST film crystallization via C-AFM-generated electrical pulses

Puntos clave

• Crystallization occurs in N-doped Ge-rich GST films, facilitating phase transitions, and enhancing memory functionalities.
• Key evidence includes significant improvements in crystallization temperature, noted at 210°C compared to 160°C for undoped samples.
• Assessment using conductive atomic force microscopy to generate electrical pulses effectively stimulates the crystallization process in the films.
• Findings suggest that N-doping may improve the thermal and electrical properties of phase change materials for memory devices.