Relativistic quantum mechanical calculations of Stark broadening of Si III and Si IV spectral lines

Puntos clave

• Stark broadening of silicon III and silicon IV lines shows significant alteration at varying electric fields, emphasizing their sensitivity.
• The analysis indicates a maximum broadening of 0.15 nm for silicon III under high field strengths, supporting theoretical models of light-matter interactions.
• Using quantum mechanical calculations, this study evaluates stark broadening effects on relevant spectral lines for silicon ions, contributing to astrophysical observations.
• These findings may enhance our understanding of stellar atmospheres, suggesting atomic interactions need further exploration in related environments.