Record- low thermal boundary resistance of GaN-on-diamond structure with ultra-high bonding rate via surface reconstruction bonding technique

Puntos clave

• Reduced thermal boundary resistance enhances thermal conductivity, promoting efficient heat dissipation.
• The study uncovered a significant bonding rate improvement owing to the surface reconstruction technique.
• Assessment using surface reconstruction bonding technique on GaN-on-diamond structures demonstrated optimal performance.
• Highlights the need for further exploration of the bonding technique's application in semiconductor technologies.