Implementation of a back barrier to boost the blocking voltage of GaN HEMT on sapphire

Puntos clave

• The implementation of a back barrier leads to increased blocking voltage in GaN HEMT.
• Observational analysis across various device models shows significant improvement, enhancing voltage handling capabilities.
• This study investigates the role of a sapphire substrate in stabilizing the interface of the GaN HEMT structure.
• Enhanced performance may support future applications but requires further validation in real-world conditions.