Asymmetric dual-dielectric design for enhanced performance in armchair phosphorene nanoribbon TFETs toward low-power nanoelectronic applications

Puntos clave

• Enhanced performance of armchair phosphorene nanoribbon TFETs leads to lower power consumption in electronics,
• Key metrics showed notable improvements in device efficiency and operational voltage,
• Design optimization used dual-dielectric materials to achieve desired electronic characteristics,
• Could advance low-power nanoelectronic applications, highlighting the potential for energy-efficient technologies.