Solvent engineering approach for the fabrication of CsBi3I10 films under ambient–air conditions for use in high–performance neuromorphic memory applications

Puntos clave

• High-performance neuromorphic memory capabilities were observed in CsBi3I10 films under ambient conditions.
• The solvent engineering approach significantly enhances the quality of the fabricated films, showing promising results for memory applications.
• This analysis involves methods to optimize film fabrication using ambient conditions, focusing on material properties and performance.
• The findings highlight the potential of these films for future memory technologies, emphasizing the need for further investigation into their efficacy.