Effects of fluorine on the optoelectronic properties and crystal field symmetry of silicon-based erbium doped gallium oxide films and devices

Puntos clave

• Enhanced optoelectronic properties result from fluorine treatment in gallium oxide films, revealing significant improvement.
• Key evidence shows fluorine increases the efficiency of erbium doping by optimizing crystal field symmetry in films.
• Observational analysis using experimental techniques on silicon-based gallium oxide devices clarifies fluorine's role.
• Findings indicate potential advancements in device performance, highlighting the need for further exploration into fluorine's effects.