Unveiling the atomistic wear process: how water mediates GaAs removal at the SiO2 interface

Puntos clave

• GaAs removal is influenced by the atomistic wear process mediated by water, leading to significant insights in materials science.
• The analysis revealed a clear correlation between water presence and the efficiency of GaAs material removal at SiO2 interfaces.
• Investigation of these wear mechanisms involved atomistic simulations to better understand the water-mediated interactions.
• Understanding these dynamics may enable improved durability of materials in semiconductor applications.