High-throughput investigation of electroepitaxial growth of Cu2O on Cu substrates

Puntos clave

• Cu2O was efficiently grown on Cu substrates during the electroepitaxy process, enabling better performance in electronic devices.
• The study measured growth rates and quality of thin films under various conditions, confirming optimal parameters for these materials.
• Analysis of different growth mechanisms revealed significant insights into the electroepitaxial process and its scalability.
• Future applications may benefit from these findings, particularly in the development of advanced electronic materials.