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A comprehensive review on III-V TFET design optimization | Synapse
March 3, 2026
A comprehensive review on III-V TFET design optimization
ME
Mohamed Elnaggar
YE
Yasmine Elogail
Zewail City of Science and Technology
MF
Mostafa Fedawy
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Puntos clave
III-V TFET design optimization improves electrical characteristics, enabling higher device performance.
The review emphasizes strategies for manipulating bandgap and heterostructures in device design.
Assessment of current III-V TFET technologies showcases advancements in their efficiency and application potential.
Highlights the importance of integrating innovative approaches for future developments in TFET architecture.
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Elnaggar et al. (Thu,) studied this question.
synapsesocial.com/papers/69a76721badf0bb9e87dfb5e
https://doi.org/https://doi.org/10.1016/j.micrna.2026.208601