Radiation-induced crystalline-to-amorphous transition in SiC nanocrystals: Role of nucleation barriers

Puntos clave

• The crystalline-to-amorphous transition in SiC nanocrystals is driven primarily by radiation exposure.
• Higher nucleation barriers correlate with a more stable crystalline structure during radiation exposure.
• Analysis involved temperature-controlled experiments and varying radiation doses to assess transition dynamics.
• Significant implications for the stability of SiC materials under radiation exposure may inform future applications.