What question did this study set out to answer?

The aim is to develop a high-performance self-powered photodetector for near-infrared applications.

March 5, 2026

A Multi-Interface Engineered Bi 2 Se 3 /PtSe 2 Heterojunction on Pyramid Si Nanostructures for Self-Powered Near-Infrared Photodetection

Puntos clave

The aim is to develop a high-performance self-powered photodetector for near-infrared applications.
Fabrication of a Bi2Se3/PtSe2 heterojunction on pyramid Si nanostructures.
Characterization of the photodetector's optical and electrical properties.
Measurement of responsivity under NIR illumination.
The Bi2Se3/PtSe2/Pr-Si device shows a 9-fold increase in responsivity at 5 V compared to the PtSe2/Pr-Si device.
Self-powered operation achieved with a 10-fold increase in responsivity.
Stable ON–OFF switching behavior observed under NIR illumination.

Resumen

The development of high-performance near-infrared (NIR) photodetectors (PDs) in self-powered operation is crucial and essential for next-generation optoelectronic applications. Herein, we report a Bi2Se3/PtSe2-based heterojunction on pyramid-Si (Pr-Si) PD that integrates topological and transition metal dichalcogenide materials with light-trapping of Pr-Si nanostructures to achieve a self-powered and highly enhanced NIR photoresponse. The Pr-Si substrate offers an enlarged surface area and efficient photon confinement, while the conformally coated semi-metallic PtSe2 nanosheets form a conductive interfacial layer that promotes charge transfer. The optimized Bi2Se3/PtSe2/Pr-Si-based PD device exhibits an ∼9-fold enhancement in responsivity (∼202 A/W) compared to the PtSe2/Pr-Si-based (∼21.4 A/W) PD device at 5 V in the NIR region, demonstrating efficient charge transport and suppressed recombination. Additionally, the Bi2Se3/PtSe2/Pr-Si-based PD device exhibits self-powered photodetection with an ∼10-fold increase in responsivity (∼853 mA/W) as compared to the PtSe2/Pr-Si-based (∼80.8 mA/W) PD device. The fabricated Bi2Se3/PtSe2/Pr-Si PD device exhibits stable, repeatable ON–OFF switching behavior under NIR illumination. These findings highlight the synergistic effect of the Bi2Se3 and PtSe2 heterojunction, underscoring the potential of hybrid nanostructures for high-performance, energy-efficient, and self-powered NIR photodetection.

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