Performance Evaluation of Si Power and SiC MOSFET, IGBT, and HEMT GaN at Cryogenic Temperature for Superconducting Propulsion System

Puntos clave

• The study aims to evaluate the performance of various semiconductor technologies at cryogenic temperatures.
• Compared Si power devices, SiC MOSFETs, IGBTs, and GaN HEMTs under cryogenic conditions.
• Analyzed electrical performance metrics such as efficiency and thermal stability.
• Identified optimal semiconductor performance characteristics at low temperatures.
• Noted significant differences in efficiency and thermal management among devices.