Electron transport properties of Si nanosheets: Transition from direct tunneling to Fowler-Nordheim tunneling

We have characterized the electron transport properties of n-decylamine-functionalized Si nanosheets (NSs) using atomic force microscopy with a conductive cantilever under vacuum conditions at room temperature. Electrons are transported from the cantilever to the substrate through Si NSs. The Si NSs exhibit nonresonant tunneling; the transport mechanisms are based on direct tunneling at low bias voltages and Fowler–Nordheim tunneling at high bias voltages.