Pressure-enhanced fractional Chern insulators along a magic line in moiré transition metal dichalcogenides

The effect of applied pressure on fractional Chern insulators (FCIs) in moir\'e TMDs is numerically studied, indicating that pressure can enhance the many-body gap of these topologically ordered phases. This is supported by showing that, within the region of stability of the FCI, the quantum geometry of the topmost moir\'e flat band almost satisfies the ideal condition.