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Thermoelectric properties, i.e., thermal conductivity, electrical conductivity, and the Seebeck coefficient, have been measured in the directions parallel (in-plane) and perpendicular to the interface of an n-type Si(80 Å)/Ge(20 Å) superlattice. A two-wire 3ω method is employed to measure the in-plane and cross-plane thermal conductivities. The cross-plane Seebeck coefficient is deduced by using a differential measurement between the superlattice and reference samples and the cross-plane electrical conductivity is determined through a modified transmission-line method. The in-plane thermal conductivity of the Si/Ge superlattice is 5–6 times higher than the cross-plane one, and the electrical conductivity shows a similar anisotropy. The anisotropy of the Seebeck coefficients is smaller in comparison to electrical and thermal conductivities in the temperature range from 150 to 300 K. However, the cross-plane Seebeck coefficient rises faster with increasing temperature than that of the in-plane direction.
Bao et al. (Thu,) studied this question.
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