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The role of traps in the photocurrent generation mechanism in thin InSe photodetectors | Synapse

September 11, 2019Open Access

The role of traps in the photocurrent generation mechanism in thin InSe photodetectors

QZQinghua ZhaoNorthwestern Polytechnical University WWWei WangQingdao University FCFélix CarrascosoInstituto de Ciencia de Materiales de Madrid

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Resumen

Due to the excellent electrical transport properties and optoelectronic performance, thin indium selenide (InSe) has recently attracted attention in the field of 2D semiconducting materials.

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Cite This Study

Zhao et al. (Wed,) studied this question.

synapsesocial.com/papers/69dcd1f3854f360ad6359343 https://doi.org/https://doi.org/10.1039/c9mh01020c

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4Intrinsic Electron Mobility Exceeding 10<sup>3</sup> cm<sup>2</sup>/(V s) in Multilayer InSe FETs2015 · 431 citations
5InSe: a two-dimensional semiconductor with superior flexibility2019 · 88 citations