Thickness‐dependent highly sensitive photodetection behavior of lead‐free all‐inorganic CsSnBr 3 nanoplates

Abstract Non‐layered two‐dimensional (2D) lead‐free all‐inorganic perovskites nanoplates have recently attracted considerable attention in photodetectors; however, the in‐depth investigation of thickness on photodetection performance is still lacking. In this work, by constructing the famous metal‐semiconductor‐metal photodetectors, the photodetection behaviors of thickness‐controlled CsSnBr 3 nanoplates are investigated systematically. Ni electrodes are adopted for ensuring the good ohmic contact behaviors of as‐fabricated photodetectors. With the increase in thickness, the photodetection performances improve accordingly, such as photocurrent increases from 0.22 to 19.40 nA, responsivity increases from 72.9 to 4893.7 mA·W −1 , rise/decay time decreases from 11/35 to 3/10 ms, respectively. Notability, the dark current also increases with the increase in thickness, making the further investigation on the reduction in dark current meaningful. All of the as‐fabricated photodetectors are stable, suggesting the careful thickness selection in next‐generation high‐performance lead‐free all‐inorganic perovskites photodetectors.