Environmentally Robust Memristor Enabled by Lead‐Free Double Perovskite for High‐Performance Information Storage

Abstract Memristors are emerging as a rising star of new computing and information storage techniques. However, the practical applications are severely challenged by their instability toward harsh conditions, including high moisture, high temperatures, fire, ionizing irradiation, and mechanical bending. In this work, for the first time, lead‐free double perovskite Cs 2 AgBiBr 6 is utilized for environmentally robust memristors, enabling highly efficient information storage. The memory performance of the typical indium‐tin‐oxide/Cs 2 AgBiBr 6 /Au sandwich‐like memristors is retained after 1000 switching cycles, 10 5 s of reading, and 10 4 times of mechanical bending, comparable to other halide perovskite memristors. Most importantly, the memristive behavior remains robust in harsh environments, including humidity up to 80%, temperatures as high as 453 K, an alcohol burner flame for 10 s, and 60 Co γ‐ray irradiation for a dosage of 5 × 10 5 rad (SI), which is not achieved by any other memristors and commercial flash memory techniques. The realization of an environmentally robust memristor from Cs 2 AgBiBr 6 with a high memory performance will inspire further development of robust electronics using lead‐free double perovskites.