Fabrication and evaluation of phosphorus-doped laser-induced graphene with tunable defects and enriched active sites for high-performance supercapacitors | Synapse
April 15, 2026
Fabrication and evaluation of phosphorus-doped laser-induced graphene with tunable defects and enriched active sites for high-performance supercapacitors
Puntos clave
The study aims to create and assess phosphorus-doped laser-induced graphene as a material for supercapacitors.
Fabrication of laser-induced graphene using a laser process.
Doping with phosphorus to modify properties.
Evaluation of performance metrics for supercapacitors.
Phosphorus doping increased active sites on the graphene surface.
Improved energy storage capacity compared to undoped graphene.
Laser-induced graphene (LIG) has garnered substantial consideration in applications based on energy storage owing to its economical nature and exceptional performance as a flexible electrode material.