Transport characteristics of 2DHG in p-GaN/AlGaN/GaN heterojunction: impact of Mg dopant activation

Puntos clave

• The study aims to explore how Mg dopant activation influences the two-dimensional hole gas characteristics at the p-GaN/AlGaN interface.
• Analyzed the electrical properties of p-GaN/AlGaN/GaN heterojunctions.
• Examined the activation level of Mg dopants in different growth conditions.
• Assessed transport characteristics through electrical measurements.
• The activation of Mg dopants significantly affects the mobility of the 2DHG.
• Improved transport characteristics were observed with optimal dopant activation levels.
• The correlation between dopant activation and hole density was established, indicating enhanced conductivity.