Pressure-induced structural transitions and metallization in two-dimensional semiconductor CuInP 2 S 6

Puntos clave

• This research aims to explore how high pressure affects the structure and electrical properties of CuInP2S6.
• Applied high pressure to CuInP2S6 sample
• Monitored structural changes using X-ray diffraction
• Assessed electrical properties under pressure
• Structural transitions observed at elevated pressures
• Metallization occurred, indicating a change from semiconductor to metal behavior
• Findings suggest potential applications in electronics