Bandgap-Tunable ZnxCd1-xS Electron Transport Layer for High-Performance Inverted Quantum Dot Light-Emitting Diodes

Puntos clave

• The aim is to explore a tunable electron transport layer using ZnxCd1-xS for enhanced QLED performance.
• Development of ZnxCd1-xS electron transport layers.
• Characterization of bandgap properties.
• Comparison of performance with traditional electron transport layers.
• ZnxCd1-xS layers showed adjustable bandgap properties.
• Enhanced electron mobility was observed.
• QLEDs demonstrated higher efficiency compared to those with traditional ETLs.