Samarium‐Doped Nickel Oxide for Superior Inverted Perovskite Solar Cells: Insight into Doping Effect for Electronic Applications

Abstract Hole transport layers (HTLs) play a key role in perovskite solar cells (PSCs), particularly in the inverted PSCs (IPSCs) that demand more in its stability. In this study, samarium‐doped nickel oxide (Sm:NiO x ) nanoparticles are synthesized via a chemical precipitation method and deposited as a hole transport layer in the IPSCs. Sm 3+ doping can reduce the formation energy of Ni vacancy and naturally increase the density of Ni vacancies, thereby rendering increased hole density. Thenceforth, the electronic conductivity is enhanced significantly, and work function enlarged in the Sm:NiO x film in favor of extracting holes and suppressing charge recombination. Consequently, the Sm:NiO x ‐based IPSCs attain outstanding power conversion efficiencies as high as 20.71%. Even when it is applied in flexible solar cells, it still outputs efficiency as high as 17.95%. More importantly, the Sm:NiO x is compatible with large‐scale processing whereby the large area IPSCs of 1.0 cm 2 and 40 × 40 mm 2 deliver high efficiencies of 18.51% and 15.27%, respectively, all are among the highest for the inorganic HTLs based IPSCs. This research demonstrates that, while revealing the doping effect in depth, Sm:NiO x can be a promising hole transport material for fabricating efficient, large‐area, and flexible IPSCs in the future.