What question did this study set out to answer?

This study aims to quantify Sb donors in silicon using photoluminescence analysis, focusing on bound exciton transitions.

May 8, 2026

Quantitative analysis of Sb donors in Si by photoluminescence due to bound exciton two-electron transition

Puntos clave

This study aims to quantify Sb donors in silicon using photoluminescence analysis, focusing on bound exciton transitions.
Quantitative analysis using the intensity ratio of bound exciton two-electron transitions to free exciton emission.
Measurement of Sb donor concentrations ranging from 1 × 10^12 to 5 × 10^15 cm−3.
Comparison with P donors to eliminate interference.
Quantification of Sb donors achieved without interference from P donors.
Identified clear discrimination between BE2e transitions and free exciton emission.
Established BE2e photoluminescence as a viable method for Sb concentration measurement.

Resumen

Bound exciton (BE) emission line from Sb donors in Si coincides spectrally with that from P donors, preventing their separation by conventional photoluminescence (PL) spectroscopy. In contrast, the energies of bound exciton two-electron (BE2e) transitions in which the final state is an excited impurity are strongly impurity dependent and allow clear discrimination. We demonstrate quantitative determination of Sb donors in Si using the intensity ratio of the BE2e transition to free exciton emission. Sb concentrations from 1 × 1012 to 5 × 1015 cm−3 are measured without interference from P donors, establishing BE2e PL as a practical method for Sb quantification.

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