A Disordered-Ordered TiO 2 /TiO 2-x Homostructure Hosting a High-Mobility Interfacial Conductive Layer for Robust Symmetric Rectification

Puntos clave

• The aim is to explore a TiO2 homostructure with high-mobility conductive layers for improved electronic applications.
• Utilized a low-cost chemical vapor reduction (CVR) strategy to develop the structure.
• Analyzed the electronic properties and rectification capabilities of the fabricated homostructure.
• Achieved robust symmetric rectification with enhanced mobility in the conductive layer.
• Demonstrated the feasibility of using engineered interfacial electronic states for improved performance.