ABSTRACT In this study, differential thermal analysis (DTA) was employed to investigate the glass transition behavior and crystallization kinetics of Zn 30 Se 70 chalcogenide glass (CG) under non‐isothermal conditions. The characteristic temperatures: glass transition ( T g ), crystallization onset ( T c ), and crystallization peak ( T p ) were systematically examined as functions of the heating rate (β). Activation energies associated with both glass transition ( E g ) and crystallization processes ( E c ) were accurately determined using Kissinger's method alongside Matusita's approach. To gain deeper insight into the crystallization mechanism, experimental DTA data were rigorously compared with theoretical predictions derived from the Sestak–Berggren (SB) model and the Johnson–Mehl–Avrami (JMA) framework. The analysis revealed that the SB model provides a superior fit for describing the complex kinetics governing Zn 30 Se 70 crystallization. Complementary x‐ray diffraction (XRD) studies elucidated changes in crystalline phase content and grain size as a function of annealing temperature ( T ann. ), showing a reduction in crystalline phases up to 395 K while grain size increased progressively. Surface morphology investigations via Scanning Electron Microscopy (SEM) further confirmed the formation of diverse crystalline structures with varying morphologies following thermal treatment. These comprehensive findings not only advance fundamental understanding of Zn─Se CG behavior but also offer valuable guidance for tailoring their properties for potential optoelectronic applications.
Alwany et al. (Fri,) studied this question.