Synergies of Electrochemical Metallization and Valance Change in All‐Inorganic Perovskite Quantum Dots for Resistive Switching

QD-based RRAM with a p-channel transistor, the novel application of an RRAM-gate field-effect transistor presenting analogous functions of flash memory is further demonstrated. These results may accelerate the technological deployment of all-inorganic perovskite QD-based photonic resistive memory for successful logic application.