Hysteretic current–voltage characteristics and resistance switching at a rectifying Ti∕Pr0.7Ca0.3MnO3 interface

We have characterized the vertical transport properties of epitaxial layered structures composed of Pr0.7Ca0.3MnO3(PCMO) sandwiched between SrRuO3(SRO) bottom electrode and several kinds of top electrodes such as SRO, Pt, Au, Ag, and Ti. Among the layered structures, Ti∕PCMO∕SRO is distinct due to a rectifying I–V characteristic with a large hysteresis. Corresponding to the hysteresis of the I–V characteristics, the contact resistance of the Ti∕PCMO interface reversibly switches between two stable states by applying pulsed voltage stress. We propose a model for the resistance switching at the Ti∕PCMO interface, in which the width and/or height of a Schottky-like barrier are altered by trapped charge carriers in the interface states.