Chen et al. present a strategy for designing tailored barrier layers in thermoelectric devices and report the successful fabrication of an optimized alloy barrier for bismuth telluride-based systems. The barrier layer achieves comprehensive improvements in thermal stress, interfacial bonding, diffusion resistance, and interfacial conductivity. The fabricated thermoelectric device maintains stable performance without degradation after 30-days of continuous operation.
Chen et al. (Fri,) studied this question.