ABSTRACT III‐V semiconductor compounds, e.g. boron nitride and gallium nitride, are strategic candidates for next‐generation miniaturized illumination with high‐stability and integrated advantages, but face challenge in broad white emission in the visible region due to inherent bandgap limitation. Herein, this work reveals a trinity emitting strategy based on hexagonal boron nitride quantum dots (BNQDs) exhibiting full‐spectrum white emission. This is featured with trichromatic fluorescent states, including dual energy migration channels from blue (2.9 eV) to green peak (2.5 eV) with charge delocalization effect, and red peak (2.1 eV) by induced dipole moment interaction. The resulting BNQDs exhibit an ultra‐high color rendering index (CRI) of 95 and a wide‐range adjustable correlated color temperature (CCT). Moreover, selective deoxygenation at the nitrogen atomic site of BNQDs purposefully decreases carrier loss and phonon scattering for a record quantum yield of 68.3% alongside exceptional thermostability to 573 K, and long‐term optical stability whose performance decreased by only 4.7% when preserved in the air for 2.5 years. Our BNQD gives birth to ultra‐stable white light emitting diodes, enabling codable optical signals for multi‐level authentication with a low deviation ratio at 1/2×10 −22 . This work provides an atomic‐level regulation strategy of multiple luminescence states in single‐component white‐light materials for advanced optoelectronic applications.
Ding et al. (Fri,) studied this question.
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