An improved de-embedding technique for on-wafer high-frequency characterization

An improved correction procedure for on-wafer S-parameter measurements has been developed and implemented. The method takes the effects of series parasitics into account in a simple, straightforward way. The improved performance of the method with respect to the usual method-which accounts for parallel parasitics only-especially at frequencies exceeding a few GHz is demonstrated. Its performance is compared with that of more complex methods. f/sub T/ determined from Y-parameters is not affected by this correction method, but the individual Y-parameters are. Therefore, for transistor characterization using measured Y-parameters the proposed correction should be adopted.>