Improved performances of organic light-emitting diodes with metal oxide as anode buffer

We demonstrate extremely stable and highly efficient organic light-emitting diodes (OLEDs) based on molybdenum oxide (MoO3) as a buffer layer on indium tin oxide (ITO). The significant features of MoO3 as a buffer layer are that the OLEDs show low operational voltage, high electroluminescence (EL) efficiency and good stability in a wide range of MoO3 thickness. A green OLED with structure of ITO∕MoO3∕N,N′-di(naphthalene-1-yl)-N,N′-diphenyl-benzidene (NPB)∕NPB: tris(8-hydroxyquinoline) aluminum (Alq3):10-(2-benzothiazolyl)-2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H, 5H, 11H-(1)-benzopyropyrano(6,7-8-i,j)quinolizin-11-one (C545T)∕Alq3∕LiF∕Al shows a long lifetime of over 50000h at 100cd∕m2 initial luminance, and the power efficiency reaches 15lm∕W. The turn-on voltage is 2.4V, and the operational voltage at 1000cd∕m2 luminance is only 6.9V. The significant enhancement of the EL performance is attributed to the improvement of hole injection and interface stability at anode.