Visible-spectrum multiple-quantum-well In1−x′Gax′P1−z′Asz′- In1−xGaxP1−zAsz (x≳x′, z≳z′) heterostructure lasers

Data are presented showing that high quality visible-spectrum multiple- quantum-well In1−x′Gax′P1−z′Asz′- In1−x Gax P1−z Asz (x≳x′, z≳z′) heterostructures can be grown on GaAs1−yPy (y∼0.30) substrates by a mechanized computer-controlled liquid phase epitaxial process. Undoped visible-spectrum (6600–6000 Å) heterostructures with as many as 12 uniform coupled quantum wells (Lz∼160 Å) have been grown and have been examined (77 and 300 K) via photopumping. Phonon participation in the recombination process is dominant in these quaternary quantum-well heterostructures and lowers the recombination energy by as much as 2?ωLO (InGaPAs)∼68 meV below the lowest (n=1, n′=1′) confined-particle transitions.