What question did this study set out to answer?

This research aims to develop a flexible polymer matrix enhanced with TiN-SiO2 nanofillers for better optoelectronic and pressure-sensing capabilities.

May 21, 2026

Manufacturing and ameliorating the features of TiN-SiO 2 futuristic nanofillers doped PVA-PVP blend for optoelectronics and electronics capacitive pressure sensor

Puntos clave

This research aims to develop a flexible polymer matrix enhanced with TiN-SiO2 nanofillers for better optoelectronic and pressure-sensing capabilities.
Polymer blend of PVA and PVP doped with TiN-SiO2 nanofillers
Characterization techniques including FTIR, optical microscopy, UV-Vis spectroscopy, and LCR measurements
Pressure-sensing tests to evaluate performance
Optical band gap decreased from 4.73 to 4.38 eV, indicating improved photonic properties
Increased dielectric permittivity (ε′) and AC conductivity (σ a.c) observed with TiN-SiO2 addition
PVA-PVP-TiN-SiO2 films demonstrate high pressure sensitivity and mechanical flexibility.

Resumen

The development of flexible polymer nanocomposites with enhanced functional properties is of considerable interest for modern optoelectronic and sensing technologies. This study investigates a (Poly (vinyl alcohol) (PVA) - Polyvinyl pyrrolidone (PVP)) blend doped with hybrid (titanium nitride (TiN) - silicon dioxide (SiO 2 )) nanofillers as a promising material for improving optical, dielectric, and capacitive pressure-sensing performance. The prepared films were characterized by FTIR spectroscopy, optical microscopy, UV-Vis spectroscopy, and LCR measurements. The polymer matrix and the additional nanoparticles interact physically, according to FTIR spectra. The absorbance (A), refractive index (n), and optical conductivity (σ op ) of the empty PVA-PVP matrix all go up in a regular way when the amount of (TiN-SiO 2 ) nanoparticles goes up. In parallel, the optical band gap for permitted transitions decreases from 4.73 to 4.38 eV, whereas the optical band gap for prohibited transitions decreases from 4.44 to 3.80 eV. These changes demonstrate that the produced nanocomposites are suitable for a variety of optoelectronic devices, including solar cells, transistors, electronic switches, photovoltaic modules, lasers, and diodes. Urbach energy (Eᵤ), the nonlinear refractive index (n 2 ), the linear susceptibility (χ (1) ), and the third-order nonlinear susceptibility (χ (3) ). In contrast, a consistent reduction is observed in the average oscillator strength (S 0 ), the dispersion energy (E d .), and the single-oscillator energy (E osc ). Dielectric characterization shows that adding more (TiN-SiO 2 ) nanoparticles to the mix raises the real part of the permittivity (ε′), dielectric loss (ε″), and alternating-current conductivity (σ a.c ) compared to pure PVA-PVP. Also, pressure-sensing tests show that the PVA-PVP-TiN-SiO 2 nanostructure films have great pressure sensitivity, high mechanical flexibility, and great environmental durability. This suggests that they might make excellent advanced active layers for pressure sensor technologies of the future.

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Cite This Study

Habeeb et al. (Tue,) studied this question.

synapsesocial.com/papers/6a0ea13abe05d6e3efb5fb6f https://doi.org/https://doi.org/10.1177/08927057261454346

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