January 1, 1972

Ion-implanted complementary MOS transistors in low-voltage circuits

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Resumen

Ion-implanted complementary MOS integrated circuits which can operate at supply voltages less than 0.4 V have been fabricated. Their behavior will be described by a new theory of MOST characteristics which is valid near threshold.

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Swanson et al. (Sat,) studied this question.

synapsesocial.com/papers/6a0fdf7e57bfcc72645fc016 https://doi.org/https://doi.org/10.1109/isscc.1972.1155118

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1Physics and technology of semiconductor devices1967 · 2,803 citations
2Introduction to Digital Electronics1967 · 6 citations
3Physics of Semiconductor Devices1970 · 3,964 citations

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