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Spin-Orbit Interaction and Magnetoresistance in the Two Dimensional Random System | Synapse

February 1, 1980Open Access

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Spin-Orbit Interaction and Magnetoresistance in the Two Dimensional Random System

SHS. HikamiOkinawa Institute of Science and Technology Graduate University ALA. I. LarkinRutgers, The State University of New Jersey YNYasutaka NagaokaBrown University

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Resumen

Effect of the spin-orbit interaction is studied for the random potential scattering in two dimensions by the renormalization group method. It is shown that the localization behaviors are classified in the three different types depending on the symmetry. The recent observation of the negative magnetoresistance of MOSFET is discussed.

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Cite This Study

Hikami et al. (Fri,) studied this question.

synapsesocial.com/papers/6a10a0604fb650da4fffc12e https://doi.org/https://doi.org/10.1143/ptp.63.707