Resonant Tunneling through Si/SiO2Double Barriers

Evidence of resonant tunneling of electrons at room temperature has been found in nSi/SiO2/poly Si/SiO2/metal double-barriers. The observed singularities in the dc conductance curves have been explained as the tunneling through the quasistationary states of the potential well. The effective mass of tunneling electron and the Fermi level of polycrystalline Si have been determined from the measured resonant energies.