Deep level transient spectroscopy of high-energy heavy ion irradiation-induced defects in n-type germanium

Swift heavy ion irradiation-induced defects have been studied in n-type germanium at room temperature using deep level transient spectroscopy. Several electron traps have been observed after irradiation. The corresponding energies have been determined to be at Ec−0.22, Ec−0.275, Ec−0.29, Ec−0.32, and Ec−0.465 eV. The isochronal annealing behavior of these traps has been studied in detail between room temperature and 200 °C. Comparison of our results with previously published ones allowed an identification of these defects with complexes like divacancies or associations of vacancies with impurities.