Electrical properties of polyacetylene/polysiloxane interface

Polyacetylene/polysiloxane interface states have been investigated using metal-insulator-semiconductor (MIS) diodes. The 1-mm2 MIS diodes (Al/polysiloxane/polyacetylene) have been fabricated by use of a conventional photolithographic technique. The I-V and C-V measurements were used to explore the polyacetylene/polysiloxane interface electrical properties. The electrical conduction mechanism in this interface was found to be a Schottky-Richardson mechanism. Using the C-V measurements to determine the interface states density distribution, it was found that the distribution had a U shape in the gap and its minimum value was 6×1013 eV−1 cm−2. An attempt was made to fabricate an insulating gate field-effect transistor which worked as a depletion-type transistor with a very low transconductance, gm =13 nΩ−1.