An Advanced Epitaxial Strategy Enabling Vertical GaN Devices on Silicon Wafers

ABSTRACT While vertical gallium nitride (GaN)‐on‐silicon architectures promise a transformative leap in cost‐effective power electronics and high‐resolution micro‐LEDs, their deployment remains bottlenecked by the high electrical resistance of conventional epitaxial buffer layers. Here, a universal and straightforward sputtering‐based strategy is presented to realize high‐quality GaN epitaxial films on Si(111) substrates characterized by exceptionally low vertical resistance, ohmic behavior, and robust thermal stability. This technique centers on the in situ formation of a sub‐nanometer (∼0.5 nm) silicide‐based template via rapid thermal annealing—a method demonstrating unprecedented versatility across 25 different metallic species. Scanning transmission electron microscopy (STEM) reveals that a unique amorphous‐like interlayer (AL‐IL) effectively accommodates lattice mismatch and relaxes epitaxial strain. These AL‐IL templates further serve as high‐performance platforms for metalorganic chemical vapor deposition (MOCVD) overgrowth, successfully bridging the gap between scalable, low‐cost fabrication and device‐grade vertical performance.