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January 17, 2008

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High-efficiency ultra-wideband power amplifier in GaN technology

PCPaolo ColantonioUniversity of Rome Tor Vergata FGF. GianniniUniversity of Rome Tor Vergata RGRocco GiofrèUniversity of Rome Tor Vergata

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Resumen

The experimental results of an ultra-wideband high-efficiency power amplifier (PA) in GaN technology are presented. The active device is a HEMT with 1 mm of gate periphery. The realised PA operates from 0.8 to 4 GHz, showing a drain efficiency greater than 40% with an output power higher than 32 dBm in the overall bandwidth.

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Colantonio et al. (Thu,) studied this question.

synapsesocial.com/papers/6a1bca840a1f7575939ceba6 https://doi.org/https://doi.org/10.1049/el:20083067

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High-efficiency ultra-wideband power amplifier in GaN technology | Synapse