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Thin-film transistors (TFTs) are a key element of flexible electronics implemented on low-cost substrates. Most TFT technologies, however, have only monotype-either n- or p-type-devices. In this paper, we propose a novel design style Pseudo-CMOS for flexible electronics that uses only monotype single-V T TFTs but has comparable performance with the complementary-type or dual-V T designs. The manufacturing cost and complexity can therefore be significantly reduced, whereas the circuit yield and reliability are enhanced with built-in postfabrication tunability. Digital cells are fabricated in two different TFT technologies, i.e., p-type self-assembled-monolayer-organic TFTs and n-type metal-oxide InGaZnO TFTs, to validate the proposed Pseudo-CMOS design style. To the best of our knowledge, this is the first design solution that has been experimentally proven to achieve superior performance for both types of TFT technologies.
Huang et al. (Tue,) studied this question.
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